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An atmospheric-pressure quartz tube furnace for annealing doped poly-Si and metal-containing wafers. This tool may be used for annealing and glass bonding of wafers containing Al, Cr, and Au, for which there is a maximum allowed temperature of 500 °C. |
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Contacts
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Process Gases
| Process Gases | Max Flow (MFC Range) |
|---|---|
| N2 carrier | 1000 sccm |
| N2 BKFL | 5000 sccm |
| H2 | 1000 sccm |
Temperature Ranges
| Zone | Min | Max |
|---|---|---|
| 1 | 500 C | 1100 C |
| 2 | 500 C | 1100 C |
| 3 | 500 C | 1100 C |
Standard Process Parameters
Table to highlight system features these can be displayed in the format that makes the most sense for the tool. The table below is an example using an ICP-RIE
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Documents
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| Hazard Assessment |
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Staff Documents
Drive Folder
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Related Documents
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