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An atmospheric-pressure quartz tube furnace for annealing doped poly-Si and metal-containing wafers. This tool may be used for annealing and glass bonding of wafers containing Al, Cr, and Au, for which there is a maximum allowed temperature of 500 °C.

LMACS Name	Tystar Doped Anneal (tube 5)
Process Area
Model	Tytan Mini Series
Vendor	Tystar
Team	Timothy Harrison Aaron Hryciw Glenn Elaschuk

Serial Number	4201062LS
UofA Asset Tag Number	454969
Service Contract

Contacts

	Name	Company	Email	Phone
Technical Contact	Henry Heidbreder	Tystar	henryh@tystar.com	310-781-9219 ext 213
	Jim Smith	Tystar	jsmith@tystar.com	310-78109219 ext 219
Sales Contact	Long Hoang	Tystar	long@tystar.com	310-781-9219 ext 223

Process Gases

Process Gases	Max Flow (MFC Range)
N2 carrier	1000 sccm
N2 BKFL	5000 sccm
H2	1000 sccm

Temperature Ranges

Zone	Min	Max
1	500 C	1100 C
2	500 C	1100 C
3	500 C	1100 C

Standard Process Parameters

Table to highlight system features these can be displayed in the format that makes the most sense for the tool. The table below is an example using an ICP-RIE

Temperature
Duration

Documents

Insert links to Google Drive documents OR links to confluence pages that contain the docs

Operating Procedure	Tystar SOP
Hazard Assessment

Staff Documents

Insert reference to nf-Equipment/<Equipment Name> folder for access to all docs. Call out the manuals and schematics

Tystar Documentation	Tystar Furnaces
Service Manual	Tystar furnaces/Manuals
Temperature Calibration
nanoFAB Quartz Inventory