Skip to end of metadata
Go to start of metadata

Overview

An atmospheric-pressure quartz tube furnace for annealing doped poly-Si and metal-containing wafers. This tool may be used for annealing and glass bonding of wafers containing Al, Cr, and Au, for which there is a maximum allowed temperature of 500 °C.

Process Gases

Process GasesMax Flow (MFC Range)
N2 carrier1000 sccm
N2 BKFL5000 sccm
H21000 sccm

Temperature Ranges

ZoneMin Max
1500 C1100 C
2500 C1100 C
3500 C1100 C

Standard Process Parameters

Table to highlight system features these can be displayed in the format that makes the most sense for the tool. The table below is an example using an ICP-RIE

Temperature



Duration



Documents

Operating Procedure
Hazard Assessment