Process information for ZrO2 films deposited on the KJLC ALD 150LX system.
Recipe parameters - Thermal ZrO2 (TDMAZ + H2O)
| Recipe name | PR - ALD ZrO2 (TDMAZ + H2O) LP |
|---|---|
| Substrate Temperature (°C) | 250 |
| TDMAZ Dose (ms) | 400 |
| Ar Purge 1a (ms) | 3000 |
| Ar Purge 1b (ms) | 7000 |
| H2O Dose (ms) | 20 |
Ar Purge 2 (ms) | 10000 |
*LP = low pressure, where the Ar flows are reduced prior to dosing. The Ar flows are reduced, then the TDMAZ dosed for the specified time. Once done, the Ar flows are returned to normal flows (purge 1a), and the chamber purged for the set purge time (purge 1b).
Uniformity
Film properties
| Growth rate (nm/cycle) | 0.08 |
|---|---|
| Uniformity, SUP (± %) | 0.3 |
| Refractive index (λ = 633 nm) | 2.17 |
Recipe parameters - Plasma ZrO2 (TDMAZ + O2 Plasma)
| Recipe name | PR - PEALD ZrO2 (TDMAZ + O2 plasma) LP |
|---|---|
| Substrate Temperature (°C) | 250 |
| TDMAZ Dose (ms) | 400 |
| Ar Purge 1a (ms) | 3000 |
| Ar Purge 1b (ms) | 7000 |
| O2 Plasma Dose (ms) | 5000 |
Ar Purge 2 (ms) | 5000 |
*LP = low pressure, where the Ar flows are reduced prior to dosing. The Ar flows are reduced, then the TDMAZ dosed for the specified time. Once done, the Ar flows are returned to normal flows (purge 1a), and the chamber purged for the set purge time (purge 1b).
Film properties
| Growth rate (nm/cycle) | 0.094 |
|---|---|
| Uniformity, SUP (± %) | 0.7 |
Uniformity
