The Kurt J. Lesker Company® (KJLC®) ALD150LX™ is an Atomic Layer Deposition (ALD) system designed specifically for advanced research and development (R&D) applications. Innovative ALD150LX™ design features, like our Patented Precursor Focusing Technology™, blended with advanced process capability provide unparalleled flexibility and performance. With an emphasis on enabling and supporting innovative, cutting edge technology at the R&D level, the ALD150LX™ serves not only as a stand-alone platform, but provides connectivity with additional process and analysis modules in a cluster tool configuration.

Confluence Labelkjlc-150lx-ald
Process Area


ModelALD 150LX
VendorKurt J. Lesker (KJL)

System Features

Substrate Handling

Load locked single wafer transfer

Substrate sizes:


2 mm × 2 mm

150 mm ø

5 mm thickness w/o carrier

3.5 mm with carrier

Substrate Heatingup to 500 ºC 

Source 1 - Single Vapour Draw (H2O)

Source 2 - Flow through 

Source 3 - Multi-source Vapour Draw (5 ampoules)

Source 4 - Flow-through heated oven

  • Aluminium oxide (Al2O3)
    • TMA + H2O
    • TMA + O2 plasma
    • TMA + O3
  • Silicon dioxide (SiO2)
    • 3DMAS + O2 plasma
  • Hafnium oxide (HfO2)
    • TDMAH + H2O
    • TDMAH + O2 plasma
  • Zirconium oxide (ZrO2)
    • TDMAZ + H2O
    • TDMAZ + O2 plasma
  • Silicon nitride (Si3N4)
    • 3DMAS + N2 plasma
  • Titanium nitride (TiN)
    • TiCl4 + N2/H2 plasma
  • Aluminum nitride (AlN)
    • TMA + N2 plasma
Plasma Source Gases

Source 5 - 1 kW RF Remote ICP

  • Argon (Ar)
  • Oxygen (O2)
  • Nitrogen (N2)
  • Hydrogen (H2)
  • Ammonia (NH3)
  • Ozone (O3) - via ozone generator (non-plasma)

Process Information

Please see the KJLC ALD 150LX process information page for a listing of qualified recipes and associated data.


Operating Procedure
Hazard Assessment