Process information for standard low-stress nitride (LSN1), deposited on LPCVD Nitride (Tube 2) on 100 mm Ø Si wafers.
LPCVD recipes that are valid for 100 mm Ø substrates may not be valid for 150 mm Ø substrates due to process gas depletion.
Recipe parameters
| Recipe name | VNIT.002 |
|---|---|
| Temperature L/C/S (°C) | 835/835/835 |
| DCS flow (sccm) | 50 |
| NH₃ flow (sccm) | 10 |
| Process pressure (mTorr) | 150 |
Results
| Wafer spacing | Triple spacing | Triple spacing | Double spacing |
|---|---|---|---|
| Total number of substrates | 9 (single boat) | 18 (two boats) | 26 (two boats) |
| Qualification date |
|
|
|
| Deposition rate (nm/min) | 2.86 | 2.93 | 2.66 |
| Uniformity, SUP (± %) | 1.5 | 1.0 | 0.9 to 2.1 |
Load boat uniformity (%) | 2.4 | 2.4 | 3.5 |
Source boat uniformity (%) | N/M | N/M | 1.0 |
| Batch uniformity (%) | 2.4 | 2.4 | 6.3 |
| Refractive index (λ = 633 nm) | 2.19 | 2.19 | 2.19 |
| Stress (MPa) | 118 (tensile) | N/M | 63 (tensile) |
| Comments | 9 wafers total, triple spacing | Samples measured in L boat only |
