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Info

Process information for standard stoichiometric nitride deposited on LPCVD Nitride (Tube 2).


Recipe parameters

Recipe nameVNIT.002
Temperature L/C/S (°C)767/770/773
DCS flow (sccm)25
NH₃ flow (sccm)75
Process pressure (mTorr)250


Results

Deposition rate (nm/min)2.96
Uniformity, SUP (± %)1.3
Refractive index (λ = 633 nm)2.01
Stress (MPa)~1100 (tensile)
Comments20 wafers total, single spacing



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groupnf-staff

Qualification process procedure

  1. Substrates:  Si prime wafers, 100 mm diameter, 525 ± 20 μm thick, SSP, ⟨100⟩, p-type/B, 10–20 Ω•cm
  2. [Full qual only] Stress baseline measurement (Thin Film Stress Measurement (FLX 2320S))
  3. Piranha clean (Wet Process - Piranha - Wet Deck 2B):  15 min in 3:1 H₂SO₄:H₂O₂ + dump rinse + spin-rinse-dry
  4. Oxide strip (Wet Process - HF/BOE - Wet Deck 1A/B):  30 s in 10:1 BOE + dump rinse + spin-rinse-dry
  5. LPCVD nitride deposition (LPCVD nitride (tube 2)):  Load two full boats of wafers with single spacing (no empty slots between wafers) (question)
  6. Ellipsometry to determine optical constants (VASE Ellipsometer):  Measure at wafer centre.
  7. Thickness mapping (Filmetrics F50-UV):  Use optical constants from ellipsometry.  Uniformity calculated as std_dev/mean from 115 point map, 5 mm edge exclusion.
  8. [Full qual only] Backside nitride strip (RIE (Trion))
  9. [Full qual only] Stress measurement (Thin Film Stress Measurement (FLX 2320S))