Process information for standard stoichiometric nitride deposited on LPCVD Nitride (Tube 2).
Recipe parameters
| Recipe name | VNIT.002 |
|---|---|
| Temperature L/C/S (°C) | 767/770/773 |
| DCS flow (sccm) | 25 |
| NH₃ flow (sccm) | 75 |
| Process pressure (mTorr) | 250 |
Results
| Deposition rate (nm/min) | 2.96 |
|---|---|
| Uniformity, SUP (± %) | 1.3 |
| Refractive index (λ = 633 nm) | 2.01 |
| Stress (MPa) | ~1100 (tensile) |
| Comments | 20 wafers total, single spacing |
- VASE .mat data: lpcvd stoich nitride t-l fit 1 211027.mat