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Process information for HfO2 films deposited on the KJLC ALD 150LX system.


Recipe parameters - Thermal HfO2 (TDMAH + H2O)

Recipe name

PR - ALD HfO2 (TDMAH + H2O)

Substrate Temperature (°C)250
TDMAH Dose (ms)200
Ar Purge 1 (ms)10000
H2O Dose (ms)20

Ar Purge 2 (ms)

10000


Uniformity

Film properties

Growth rate (nm/cycle)

0.079095

Uniformity, SUP (± %)0.2
Refractive index (λ = 633 nm)2.05


Optical constants

Link to VASE .mat data:

Google Drive Live Link
urlhttps://drive.google.com/file/d/1okPnUq5pc9pNAQ1XoVihtKvwOLUXCvJB/view?usp=drivesdk

Recipe parameters - Plasma HfO2 (TDMAH + O2 Plasma)

Recipe name

PR - PEALD HfO2 (TDMAH + O2 Plasma)

Substrate Temperature (°C)250
TDMAH Dose (ms)140
Ar Purge 1 (ms)10000
O2 Plasma Dose (ms)5000

Ar Purge 2 (ms)

5000


Film properties

Growth rate (nm/cycle)

0.095

Uniformity, SUP (± %)1.2


Uniformity



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Qualification process procedure (edit to match procedure for this material)

Acquisition parameters for metrology are given in the acquisition parameters from the PECVD Standard qual measurements.

  1. Substrates:  Si prime wafers, 100 mm diameter, 525 ± 20 μm thick, SSP, ⟨100⟩, p-type/B, 10–20 Ω•cm
  2. Piranha clean (Wet Process - Piranha - Wet Deck 2B):  15 min in 3:1 H₂SO₄:H₂O₂ + dump rinse + spin-rinse-dry
  3. Deposition ():  [recipe name, dep time, etc.]
  4. Ellipsometry to determine optical constants (VASE Ellipsometer):  Measure at wafer centre.  Initial fitting done using the reference model from JA Woollam (Al2O3_cl.mat), with the thickness, pole #1 and Magnitude parameters set to fit.  MSE <5.
  5. Thickness mapping (Filmetrics F50-UV):  Use optical constants from ellipsometry.  Uniformity calculated as std_dev/mean from 115 point map, 3 mm edge exclusion.