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Process information for amorphous silicon deposited on the Plasma-Therm Versaline PECVD system. |
Recipe parameters
Recipe name |
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RF power (W) | 20 |
Chamber pressure (mTorr) | 600 |
SiH4 flow (sccm) | 25 |
Ar flow (sccm) | 1400 |
Lower electrode temperature (°C) | 250 |
Upper electrode temperature (°C) | 175 |
Film properties
Deposition rate (nm/min) | 24.31 |
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Uniformity, SUP (%) | 1.7 |
Refractive index (λ = 633 nm) | 4.090 |
Stress (MPa) | 13.65 (tensile) average on three Si wafers with initial SiO2 thickness of ~500nm, and the average deposited a-Si thickness was 491nm 128.09 (tensile) on one 100mm Fused Silica wafer, deposited a-Si thickness was 995nm ±XXX (tensile/compressive) |
Comments |
Etch rates
Etch process | Etch rate (nm/min) | Comments |
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[wet etchant] | ||
[tool & recipe name] |
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Qualification process procedure (edit to match procedure for this material)Acquisition parameters for metrology are given in Standard qual measurements.
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