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Process information for amorphous silicon deposited on the Plasma-Therm Versaline PECVD system.


Recipe parameters

Recipe name
  • a-Si Dep
RF power (W)20
Chamber pressure (mTorr)600

SiH4 flow (sccm)

25

Ar flow (sccm)

1400
Lower electrode temperature (°C)250
Upper electrode temperature (°C)175



Film properties

Deposition rate (nm/min)

24.31

Uniformity, SUP (%)1.7
Refractive index (λ = 633 nm)4.090
Stress (MPa)

13.65 (tensile) average on three Si wafers with initial SiO2 thickness of ~500nm, and the average deposited a-Si thickness was 491nm

128.09 (tensile) on one 100mm Fused Silica wafer, deposited a-Si thickness was 995nm

±XXX (tensile/compressive)

Comments


[Plot of optical constants]

Image Added

Link to VASE .mat data:

Google Drive Live Link
urlhttps://drive.google.com/file/d/1Nc_cc4rz5jnutiJcNv8tTmuZsNyk0oBY/view?usp=sharing


Etch rates

Etch process

Etch rate (nm/min)

Comments

[wet etchant]

[tool & recipe name]



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Qualification process procedure (edit to match procedure for this material)

Acquisition parameters for metrology are given in Standard qual measurements.

  1. Substrates:  Si prime wafers, 100 mm diameter, 525 ± 20 μm thick, SSP, ⟨100⟩, p-type/B, 10–20 Ω•cm
  2. Stress baseline measurement (Thin Film Stress Measurement (FLX 2320S))
  3. Piranha clean (Wet Process - Piranha - Wet Deck 2B):  15 min in 3:1 H₂SO₄:H₂O₂ + dump rinse + spin-rinse-dry
  4. Oxide strip (Wet Process - HF/BOE - Wet Deck 1A/B):  30 s in 10:1 BOE + dump rinse + spin-rinse-dry
  5. Deposition (Plasma-Therm Versaline PECVD):  [recipe name, dep time, etc.]
  6. Ellipsometry to determine optical constants (VASE Ellipsometer):  Measure at wafer centre.
  7. Thickness mapping (Filmetrics F50-UV):  Use optical constants from ellipsometry.  Uniformity calculated as std_dev/mean from 115 point map, 5 mm edge exclusion.
  8. Stress measurement (Thin Film Stress Measurement (FLX 2320S))