A load-locked, single-wafer plasma-enhanced chemical vapour deposition (PECVD) system for deposition of silicon dioxide, silicon nitride, silicon oxynitride, and amorphous Si.  The system is equipped with in situ process monitoring and endpoint detection.  Film thickness, composition, and stress control, as well as excellent uniformity, are easily managed through a wide range of process chemistries and parameters.

System Features

Wafer Handling - UnclampedPieces (mounted on carrier wafer), 100 mm round wafers, 150 mm round wafers, 100 mm × 100 mm square wafers

Toxic/Flammable/Pyrophoric Gas Species

SiH4, NH3, H2
Inert Gas SpeciesSF6, Ar, He, N2, N2O  
RF Power300 W, 13.56 MHz
Chuck Temperature0–350 ºC

Process Information

Please see the Plasma-Therm PECVD process information page for a listing of qualified recipes and associated data.


Related Documents