Process information for amorphous silicon deposited on the Plasma-Therm Versaline PECVD system.
Recipe parameters
| Recipe name |
|
|---|---|
| RF power (W) | 20 |
| Chamber pressure (mTorr) | 600 |
SiH4 flow (sccm) | 25 |
Ar flow (sccm) | 1400 |
| Lower electrode temperature (°C) | 250 |
| Upper electrode temperature (°C) | 175 |
Uniformity
Film properties
| Deposition rate (nm/min) | 24.31 |
|---|---|
| Uniformity, SUP (± %) | 1.7 |
| Refractive index (λ = 633 nm) | 4.090 |
| Stress (MPa) | 13.65 (tensile) on c-Si 128.09 (tensile) on fused silica |
Process notes
a-Si can exhibit poor adhesion when deposited directly onto Si wafers or metals. To improve adhesion:
- For depositions on silicon wafers:
- Implement a quick HF/BOE dip to strip surface oxide
- Perform a short (15-30 s) Ar Plasma Clean
- For depositions on metals:
- Perform a short (15-30 s) Ar Plasma Clean