Process information for amorphous silicon deposited on the Plasma-Therm Versaline PECVD system.

Recipe parameters

Recipe name

a-Si Dep

RF power (W)20
Chamber pressure (mTorr)600

SiH4 flow (sccm)

25

Ar flow (sccm)

1400
Lower electrode temperature (°C)250
Upper electrode temperature (°C)175

Uniformity


Film properties

Deposition rate (nm/min)

24.31

Uniformity, SUP (± %)1.7
Refractive index (λ = 633 nm)4.090
Stress (MPa)

13.65 (tensile) on c-Si

128.09 (tensile) on fused silica

Optical constants