Overview

Semiconductor characterization of resistivity, carrier concentration and mobility utilizing the hall effect.

LMACS Name

Nanometrics Hall Measurement (HL5500)

Confluence Labelnanometrics-hl5500-hall-measurement
Process Area

Characterization

ModelHL5500
Vendornanometrics
Team
Location

CME-L2-128



System Features


BasicWith Buffer option
Possible Measurement ConfigurationsVan der Pauw, Hall Bar and Bridge measurements Van der Pauw, Hall Bar and Bridge measurements 
MagnetRare earth permanent magnet, 0.320 Tesla, 0.1% stabilityRare earth permanent magnet, 0.320 Tesla, 0.1% stability
Sample Sizeup to 3”up to 3”
Current Range100nA - 20mA1pA - 10mA
Voltage Range4mV - 200mV4mV - 200mV
Resistivity Range10-4 - 106 Ohm/square10-1 - 1011 Ohm/square
Carrier Concentration Range106 - 1021 cm-3
Carrier Mobility Range1 - 107 cm2V-1s-1

Key Documents