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The memsstar Orbis Alpha vapour HF etcher provides gas-phase (dry) etching of sacrificial oxides, enabling stiction-free release of devices for MEMS, Si photonics/optomechanics, and other applications which previously had to rely on HF-based wet etching followed by critical point drying. The in situ NDIR sensor allows for robust process monitoring and endpoint detection, for excellent run-to-run reproducibility. |
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Contacts
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System Features
| 1 | Large process window to optimize process for any structure |
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| 2 | Selectively etch different sacrificial oxides (thermal oxide, TEOS, SOI bonded oxide, quartz, PECVD oxide, spin-on oxide, low-temperature spin-on glass) without attacking other layers (Si, Ge, SiC, C, Al₂O₃, AlF₃, AlN, Au, Cu, TiW, W, Ni, Al, Cr) |
| 3 | Accommodates substrates ranging from small pieces up to 200 mm wafers |
| 4 | Backside gas protection for 100 mm and 150 mm wafers: oxide on wafer backside is not etched inside a ~3 mm edge exclusion region |
| 5 | Excellent selectivity with silicon nitride (<5%) |
| 6 | High selectivity to underlayer and mechanical materials |
| 7 | High etch rates for undercut and blanket SiOâ‚‚ (>200 nm/min) |
| 8 | Excellent uniformity and repeatability (<5%) |
| 9 | No corrosion or stiction |
| 10 | Unique endpoint capability via NDIR process monitor |
Documents
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