Process information for silicon dioxide deposited on the Plasma-Therm Versaline PECVD system.
Recipe parameters
| Recipe name |
|
|---|---|
| RF power (W) | 90 |
| Chamber pressure (mTorr) | 1400 |
SiH4 flow (sccm) | 18 |
N2 flow (sccm) | 1400 |
N2O flow (sccm) | 1080 |
He flow (sccm) | 342 |
| Lower electrode temperature (°C) | 325 |
| Upper electrode temperature (°C) | 200 |
Uniformity
Film properties
| Deposition rate (nm/min) | 113.9 |
|---|---|
| Uniformity, SUP (± %) | 2.7 |
| Refractive index (λ = 633 nm) | 1.464 |
| Stress (MPa) | -330 (compressive) |
Etch rates
Etch process | Etch rate (nm/min) |
|---|---|
BOE (10:1) |
|
HF 49% |
|
