Process information for low-stress nitride (LSN2) with very high uniformity (<1.5%), and somewhat higher stress than standard LSN (LSN1), deposited on LPCVD Nitride (Tube 2).
Recipe parameters
| Recipe name | VNIT.002 |
|---|---|
| Temperature L/C/S (°C) | 830/835/840 |
| DCS flow (sccm) | 60 |
| NH₃ flow (sccm) | 15 |
| Process pressure (mTorr) | 150 |
Results
| Deposition time (HH:MM:SS) | 00:56:00 |
|---|---|
| Mean thickness (nm) | 202.4 |
| Uniformity, SUP (%) | 1.1 |
| Deposition rate (nm/min) | 3.6 |
| Refractive index (λ = 633 nm) | 2.15 |
| Stress (MPa) | 230 (tensile) |