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Potassium Hydroxide (KOH), and Tetramethyl Ammonium Hydroxide (TMAH) are used in wet chemical etching of silicon.  The etching is anisotropic, and takes advantage of the etching ratio between the planes of the silicon lattice.  The sidewalls of the etch are defined by the <111> plane, and the <100> plane etched at a 54.7o angle relative to the <111> plane.  The etching rate is dependent on several factors, including the solution, bath temperature and concentration, the number of wafers, crystal orientation and doping.

LMACS NameFumehood Aisle 2 - KOH/TMAH Etch Station
Confluence Label

KOH, TMAH, Fumehood Aisle 2

Process Area

Wet Processing

ModelHomemade, consisting of glass etching vessel, heating jacket, condensor, and stir plate.

System Features

Wafer Handling100mm wafersPieces - using blue tweezers of basket


Operating Procedure
Hazard Assessment
Process Information