System Features
Accommodates substrates up to 150 mm in diameter (100 mm diameter in bond aligner mode) |
Resolution down to 2.5 µm (standard); submicron resolution has been attained |
Alignment precision of down to 0.5 µm |
UV illumination uniformity of up to 5% |
Contact modes: proximity, soft contact, hard contact, vacuum contact |
Exposure modes: constant power, constant dose, split exposure |
Mask-to-wafer alignment modes: manual, assisted, and automatic (via image processing and pattern recognition) |
Topside and backside optical alignment |
Automated wedge error compensation |
Key Documents
| SOP | SUSS MABA6 Mask Aligner SOP |
|---|---|
| Hazard Assessment | SUSS MA/BA6 HA |
Related Documents