System Features
• | Four 3" planar magnetron sources; sputter-down configuration |
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• | Cryo pumped with a base pressure of <1e-7 Torr |
• | Automatic operation for wafer handling and deposition processing (via control PC) |
• | Load-locked with 6 shelves per load |
• | Tooling for 150 mm wafers and smaller |
• | Process gas: Ar only |
• | Rotating substrate holder |
• | Typical uniformity of <5% over a 150 mm wafer. |
• | RF substrate bias (etch back) |
Documents
Operating Procedure | |
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Hazard Assessment | Sputtering System #3 (Floyd) HA |
Related Documents