System Features
Six 2" sputtering guns with automated power supply and shutter control; sputter-up configuration | |
QCM for accurate rate testing immediately prior to deposition (not in situ process monitoring) | |
Substrate heating to 500 °C using quartz lamps (higher temperatures may be allowed on a case-by-case basis) | |
RF etchback | |
Plumbed with N2 and O2‚ for reactive sputtering | |
Turbo-pumped load lock and process chamber | |
Maximum substrate size: one 100 mm (4") diameter wafer | |
Tooling available for small and irregular pieces | |
Rotating substrate holder |
Target Change Schedule
- Submit new target change requests on LMACS by 5:00 pm on Thursdays. Regular target changes are scheduled on Friday afternoons between 1:00–5:00 pm unless it is a public holiday. To access the LMACS request and be added to the "Frequent users" list, contact Tim Harrison at tr1@ualberta.ca.
- 2 DC and 2 RF power supplies are currently functioning.
- Available Si targets:
- p-type: purchased from Angstrom Engineering with B = 74 ppm and B = 350 ppm.
- n-type: purchased from Plasmaterials, part # PLA135674623110
Documents
Operating Procedure | |
---|---|
Hazard Assessment | Sputtering System #4 (Moe) HA |
QCM Material Parameters | QCM Material Parameters |
Related Documents