1 | Large process window to optimize process for any structure |
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2 | Selectively etch different sacrificial oxides (thermal oxide, TEOS, SOI bonded oxide, quartz, PECVD oxide, spin-on oxide, low-temperature spin-on glass) without attacking other layers. |
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3 | Accommodates substrates ranging from small pieces up to 200 mm wafers |
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4 | Backside gas protection for 100 mm and 150 mm wafers: oxide on wafer backside is not etched inside a ~3 mm edge exclusion region |
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5 | Excellent selectivity with silicon nitride (<5%) |
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6 | High etch rates for undercut and blanket SiO2‚‚ (>200 nm/min) |
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7 | Excellent uniformity and repeatability (<5%) |
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8 | Unique endpoint capability via NDIR process monitor |
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