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Process information for Al2O3 films deposited on the KJLC ALD 150LX system. |
Recipe parameters - Thermal Al2O3 (TMA + H2O)
Recipe name | PR - ALD Al2O3 (TMA + H2O) |
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Substrate Temperature (°C) | 300 |
TMA Dose (ms) | 50 |
Ar Purge 1 (ms) | 10000 |
H2O Dose (ms) | 20 |
Ar Purge 2 (ms) | 10000 |
Uniformity
Film properties
Growth rate (nm/cycle) | 0.09 |
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Uniformity, SUP (± %) | 0.4 |
Refractive index (λ = 633 nm) | 1.66 |
Etch rates
Etch process
Etch rate (nm/min)
BOE (10:1)
Recipe parameters - Plasma Al2O3 (TMA + O2 Plasma)
Recipe name | PR - PEALD Al2O3 (TMA + O2 Plasma) |
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Substrate Temperature (°C) | 300 |
TMA Dose (ms) | 140 |
Ar Purge 1 (ms) | 10000 |
O2 Plasma Dose (ms) | 5000 |
Ar Purge 2 (s) | 5000 |
Film properties
Growth rate (nm/cycle) | 0.118 |
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Uniformity, SUP (± %) | 1.2 |
Uniformity
Recipe parameters - Al2O3 (TMA + O3)
Recipe name | PR - PEALD Al2O3 (TMA + O3) |
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Substrate Temperature (°C) | 300 |
TMA Dose (ms) | 140 |
Ar Purge 1 (ms) | 10000 |
O3 Dose (ms) | 5000 |
Ar Purge 2 (ms) | 5000 |
Film properties
Growth rate (nm/cycle) | 0.093 |
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Uniformity, SUP (± %) | 1.2 |
Uniformity
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Qualification process procedure (edit to match procedure for this material)Acquisition parameters for metrology are given in the acquisition parameters from the PECVD Standard qual measurements.
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