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Process information for amorphous silicon deposited on the Plasma-Therm Versaline PECVD system.


Recipe parameters

Recipe name

a-Si Dep

RF power (W)20
Chamber pressure (mTorr)600

SiH4 flow (sccm)

25

Ar flow (sccm)

1400
Lower electrode temperature (°C)250
Upper electrode temperature (°C)175


Uniformity

Film properties

Deposition rate (nm/min)

24.31

Uniformity, SUP (± %)1.7
Refractive index (λ = 633 nm)4.090
Stress (MPa)

13.65 (tensile) on c-Si

128.09 (tensile) on fused silica


Optical constants


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Etch rates

Etch process

Etch rate (nm/min)

Comments

HF 49%

[tool & recipe name]




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Qualification process procedure (edit to match procedure for this material)

Acquisition parameters for metrology are given in Standard qual measurements.

  1. Substrates:  Thermal oxide wafers prime wafers, 100 mm diameter, 525 ± 20 μm thick, SSP, ⟨100⟩, p-type/B, 10–20 Ω•cm
  2. Stress baseline measurement (Thin Film Stress Measurement (FLX 2320S))
  3. Ellipsometry to determine thickness of thermal oxide (VASE Ellipsometer): Measure at wafer centre.
  4. Piranha clean (Wet Process - Piranha - Wet Deck 2B):  15 min in 3:1 H₂SO₄:H₂O₂ + dump rinse + spin-rinse-dry
  5. Deposition (Plasma-Therm Versaline PECVD):  [recipe name, dep time, etc.]
  6. Ellipsometry to determine optical constants (VASE Ellipsometer):  Measure at wafer centre.
  7. Thickness mapping (Filmetrics F50-UV):  Use optical constants from ellipsometry.  Uniformity calculated as std_dev/mean from 115 point map, 5 mm edge exclusion.
  8. Stress measurement (Thin Film Stress Measurement (FLX 2320S))