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Process information for LSN (Low Stress Nitride) films deposited on the Plasma-Therm Versaline PECVD system.

Recipe parameters

Recipe name	LSN Dep
RF power (W)	100
Chamber pressure (mTorr)	850
SiH₄ flow (sccm)	14
NH₃flow (sccm)	7
N₂ flow (sccm)	1500
He flow (sccm)	126
Lower electrode temperature (°C)	300
Upper electrode temperature (°C)	200

Plot of Optical Constants

Link to VASE .mat data:

Google Drive Live Link

url	https://drive.google.com/file/d/1Ny011cgVTGWNHavzjEJwybW_f5jytl4u/view?usp=sharing

Etch process

Etch rate (nm/min)

Comments

165 nm/min with agitation
175.5 nm/min without agitation
- NOTE: Bubble formation noted on the samples sample surfaces when not agitated, causing non-uniform etching and uncertain Filmetrics measurements

[tool & recipe name]

Borofloat Etch

92 nm/min with 30s agitation
138nm/min with 60s agitation
210nm/min without agitation
- NOTE: Bubble formation noted on the sample surfaces when not agitated, causing non-uniform etching and uncertain Filmetrics measurements

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group	nf-staff

Acquisition parameters for metrology are given in Standard qual measurements.

Substrates: Si prime wafers, 100 mm diameter, 525 ± 20 μm thick, SSP, ⟨100⟩, p-type/B, 10–20 Ω•cm
Stress baseline measurement (Thin Film Stress Measurement (FLX 2320S))
Piranha clean (Wet Process - Piranha - Wet Deck 2B): 15 min in 3:1 H₂SO₄:H₂O₂ + dump rinse + spin-rinse-dry
Oxide strip (Wet Process - HF/BOE - Wet Deck 1A/B): 30 s in 10:1 BOE + dump rinse + spin-rinse-dry
Deposition (Plasma-Therm Versaline PECVD): [recipe name, dep time, etc.]
Ellipsometry to determine optical constants (VASE Ellipsometer): Measure at wafer centre.
Thickness mapping (Filmetrics F50-UV): Use optical constants from ellipsometry. Uniformity calculated as std_dev/mean from 115 point map, 5 mm edge exclusion.
Stress measurement (Thin Film Stress Measurement (FLX 2320S))