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Process information for silicon dioxide deposited on the Plasma-Therm Versaline PECVD system. |
Recipe parameters
Recipe name | SiO2 Dep OEI SiO2 Dep |
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RF power (W) | 90 |
Chamber pressure (mTorr) | 1400 |
SiH4 flow (sccm) | 18 |
N2 flow (sccm) | 1400 |
N2O flow (sccm) | 1080 |
He flow (sccm) | 342 |
Lower electrode temperature (°C) | 325 |
Upper electrode temperature (°C) | 200 |
Uniformity
Film properties
Deposition rate (nm/min) | 113.9 |
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Uniformity, SUP (± %) | 2.7 |
Refractive index (λ = 633 nm) | 1.464 |
Stress (MPa) | -330 (compressive) |
Etch rates
Etch process | Etch rate (nm/min) |
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BOE (10:1) |
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HF 49% |
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Qualification process procedure (edit to match procedure for this material)Acquisition parameters for metrology are given in Standard qual measurements.
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