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Maximum thickness of 3 µm for SiO2‚ or 2 µm for Si3N4 without a system clean. PECVD Si3N4 can be annealed to get tensile stress. |
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Contacts
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System Features
Wafer Handling | pieces (mounted) | 100 mm | 150 mm |
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Gas Species | DCS | TEOS | NH3 |
RF Power | 600 W | ||
Deposition Films | SiO2 | Si3N4 |
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Staff Documents
Drive Folder
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Related Documents
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