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A load-locked, computer-controlled, planar magnetron sputtering system with four sputter guns and RF etch back. Guns 1, 3, and 4 are always loaded with Au, Cr, and Al targets, respectively; the Gun 2 target is swapped upon request. |
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Contacts
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System Features
| • | Four 3" planar magnetron sources |
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| • | Cryo pumped with a base pressure of <1e-7 Torr |
| • | Automatic operation for wafer handling and deposition processing (via control PC) |
| • | Load-locked with 6 shelves per load |
| • | Tooling for 150 mm wafers and smaller |
| • | Process gas: Ar only |
| • | Rotating substrate holder |
| • | Typical uniformity of <5% over a 150 mm wafer. |
| • | RF substrate bias (etch back) |
Documents
| Operating Procedure | |
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| Hazard Assessment | Sputtering System #3 (Floyd) HA |
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Staff Documents
Target Change Record
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Related Documents
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