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Book this tool for wet oxidation processes. For dry oxidation, use Tystar Oxidation (dry). This tube is currently restricted to virgin Si prime wafers, or processed Si/SOI wafers containing silicon oxide or nitride. |
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Contacts
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Process Gases
| Process Gases | Max Flow (MFC Range) |
|---|---|
| N2 | 10000 sccm |
| O2 | 5000 sccm |
| Liquid H20 | 10mL/min |
Temperature Range
| Zone | Min | Max |
|---|---|---|
| 1 | 550 C | 1100 C |
| 2 | 550 C | 1100 C |
| 3 | 550 C | 1100 C |
Oxidation Calculator
This calculator uses the Deal–Grove or Massoud models for thermal oxidation of silicon. Choose the oxidation process parameters (wet/dry, oxidation temperature, Si crystal orientation, etc.), and the calculator will return either the oxide thickness given oxidation time or the oxidation time given thickness, with a plot of results.
Documents
| Operating Procedure | |
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| Hazard Assessment |
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Staff Documents
Drive Folder
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Related Documents
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