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A load-locked, single-wafer plasma-enhanced chemical vapour deposition (PECVD) system for deposition of silicon dioxide, silicon nitride, silicon oxynitride, and amorphous Si. The system is equipped with in situ process monitoring and endpoint detection. Film thickness, composition, and stress control, as well as excellent uniformity, are easily managed through a wide range of process chemistries and parameters. |
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Contacts
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System Features
| Wafer Handling - Unclamped | Pieces (mounted on carrier wafer), 100 mm round wafers, 150 mm round wafers, 100 mm × 100 mm square wafers |
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Toxic/Flammable/Pyrophoric Gas Species | SiH4, NH3, H2 |
| Inert Gas Species | SF6, Ar, He, N2, N2O |
| RF Power | 300 W, 13.56 MHz |
| Chuck Temperature | 0–350 ºC |
Process Information
Please see the Plasma-Therm PECVD process information page for a listing of qualified recipes and associated data.
Documents
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| Hazard Assessment | Plasma-Therm Versaline PECVD HA |
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Staff Documents
Drive Folder
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Related Documents
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