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idSOP


Applicable EquipmentRaith150 TWO EBL System
SynonymsEBL
Process AreaLithography



ZEP520A

  • Substrate: Si
StepParametersValues

Spin coat and bake

Spin speed (rpm)5000
Time (s)60
Bake temp. (°C)180
Time (min)5
Thickness (nm)335
EBL exposureAcceleration Voltage (kV)3010
Aperture (µm)1015
Min. clearing dose (µC/cm²)30012512550

Development


Developer

ZED-N50

StopperIPA
Temp. (°C)-15RT*-15RT*
Time (s)20

*room temperature.


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ZEP520A test results (restricted access)

  • 10 kV developed at room temperature
    • Single pixel dots were all overdosed with a minimum dose of 0.01 pC
    • Single pixel lines opened with a dose of 125 pC/cm. Minimum separation with acceptable results was 180 nm and the lines width was about 40 nm, which is consistent with the typical blowout observed in normal processes.
    • Larger areas (10 µm wide) were cleared with a dose of 50 µC/cm². Small areas (120 nm wide) were cleared with a dose of 100 µC/cm². Large areas had a typical blowout of 100 nm while the small ones had a blowout of 40 nm to 80 nm (these values have SEM charging effects included). Small squares were rounded.
    • SEM images can be found  here.
  • 10 kV developed at -15 °C
    • Single pixel dots were all overdosed with a minimum dose of 0.01 pC. However, it was less overdosed than when developed at RT.
    • Single pixel lines opened with a dose of 250 pC/cm. Minimum separation with acceptable results was 200 nm and the lines width was about 35 nm, which is consistent with the typical blowout observed in normal processes.
    • Larger areas (10 µm wide) were cleared with a dose of 125 µC/cm². Small areas (120 nm wide) were cleared with a dose of 250 µC/cm². Large areas had a typical blowout of 100 nm while the small ones had a blowout of 40 nm to 80 nm (these values have SEM charging effects included). Small squares were rounded, but less than the RT case.
    • SEM images can be found  here.
  • 30 kV developed at room temperature
    • Single pixel dots worked with a minimum dose of 0.01 pC. However, some proximity effect was observed. Perhaps a little smaller dose would be ideal. Dot size was measured to be 40 nm in the center of the array and 30 on the edges.
    • Single pixel lines opened with a dose of 250 pC/cm. Minimum separation with acceptable results was 260 nm and the lines width was about 40 nm, which is consistent with the typical blowout observed in normal processes.
    • Larger areas (10 µm wide) were cleared with a dose of 125 µC/cm². Small areas (120 nm wide) were cleared with a dose of 150 µC/cm². Large areas had a typical blowout of 100 nm while the small ones had a blowout of 30 nm to 80 nm (these values have SEM charging effects included). Small squares were rounded, but less than the 10 kV cases.
    • SEM images can be found  here.
  • 30 kV developed at -15 °C
    • Single pixel dots worked with a minimum dose of 0.01 pC with some fluctuation on dot sizes. With 0.015pC the dots are more uniform but some proximity effect is noticeable (larger dots towards the center). Dot sizes between 15 nm and 20 nm.
    • No single pixel lines open. As of  we still don't have a good recipe for this feature.
    • Larger areas (10 µm wide) were cleared with a dose of 300 µC/cm² with very little leftovers on square corners (slight adjustment should solve this). Small areas were all underdosed.
    • SEM images can be found  here.

 

  • Dose test on a batch expired since 2015
    • Resist behaved as expected. Same doses describe above, as well as development process, works exactly as it does for newer batches.
    • With this we can safely sell the reclaimed bottles.

PMMA 950k A2 (work in progress)

  • Substrate: Si
StepParametersValues

Spin coat and bake

Spin speed (rpm)4000
Time (s)

45

Bake temp. (°C)180
Time (min)5
Thickness (nm)71
EBL exposureAcceleration Voltage (kV)3010
Aperture (µm)1015
Min. clearing dose (µC/cm²)>750375525150

Development


Developer

MIBK/IPA 1:3

StopperIPA
Temp. (°C)-15RT*-15RT*
Time (s)20602060

*room temperature.


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PMMA 950k A2 test results (restricted access)

  • 10 kV developed at room temperature
    • Single pixel dots were not tested yet
    • Single pixel lines were not tested yet
    • Large areas (10 µm wide) are good with DF=1 (150 µC/cm²). Small areas are good with DF=2 (300 µC/cm²). Large areas are about the nominal size (± 22 nm from image resolution). Small areas are 25 nm (± 2.8 nm from image resolution) wider than the nominal value.
    • SEM images can be found  here.
  • 10 kV developed at -15 °C
    • Single pixel dots were not tested yet
    • Single pixel lines were not tested yet
    • Large areas are good with DF=3.5 (525 µC/cm²). Small areas are good with DF=4 (600 µC/cm²). Edges are much smoother than when developed at RT. Large areas are about the nominal size (± 22 nm from image resolution). Small areas are 35-40 nm (± 2.8 nm from image resolution) wider than the nominal value.
    • SEM images can be found  here.
  • 30 kV developed at room temperature
    • Single pixel dots were not tested yet
    • Single pixel lines were not tested yet
    • Large areas are good with DF=2.5 (375 µC/cm²). Small areas are also good with DF=2.5. Large areas are about the nominal size (± 22 nm from image resolution). Small areas are 15-30 nm (± 2.8 nm from image resolution) wider than the nominal value.
    • SEM images can be found  here.
  • 30 kV developed at -15 °C
    • Single pixel dots were not tested yet
    • Single pixel lines were not tested yet
    • Areas are not clear with highest tested DF (DF=5, 750 µC/cm²). Given the current results, the dose for opening large areas must be closer to 1050 µC/cm².
    • SEM images can be found  here.

PMMA bilayer (work in progress)

  • Substrate: Si
StepParametersValues

Spin coat and bake

Spin speed (rpm)4000
Time (s)45
Bake temp. (°C)180
Time (min)5
Thickness (nm)54(495K) / 71(950K)
EBL exposureAcceleration Voltage (kV)30301010
Aperture (µm)10101515
Min. clearing dose (µC/cm²)



Development


Developer

MIBK/IPA 1:3

StopperIPA
Temp. (°C)-15RT*-15RT*
Time (s)20602060

*room temperature.


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special@authenticated

PMMA bilayer test results (restricted access)

  • 10 kV developed at room temperature
    • Single pixel dots
    • Single pixel lines
    • Areas
    • SEM images can be found here.
  • 10 kV developed at -15 °C
  • 30 kV developed at room temperature
  • 30 kV developed at -15 °C

AQM SiOx - 6% (work in progress)

  • Substrate: Si
  • Mix 0.255 g of powder to 5 mL HPLC-grade MIBK to obtain 6% concentration
    • Use smaller volumes/mass to obtain smaller final volumes and different concentrations
    • MIBK density: ~802 kg/m³
  • Dispense using syringe with 200 nm PTFE filter
StepParametersValues

Spin coat and bake

Spin speed (rpm)4500
Time (s)40
Bake temp. (°C)80
Time (min)4
Thickness (nm)100 nm
EBL exposureAcceleration Voltage (kV)30

10

Aperture (µm)1015
Min. clearing dose (µC/cm²)

Development


Developer

MF-319

StopperDI-water
Temp. (°C)RT*
Time (s)60

*room temperature.


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AQM SiOx - 6% test results (restricted access)

  • 10 kV developed at room temperature
    • Single pixel dots
    • Single pixel lines
    • Areas
    • SEM images can be found here.
  • 10 kV developed at -15 °C
  • 30 kV developed at room temperature
  • 30 kV developed at -15 °C

ma-N2403 (work in progress)

  • Substrate: Si
  • Standard cleaning: piranha
  • Surface priming done immediately before spin coating:
    • 30 s in DI-water bath
    • Dry with N2 gun
    • 60 s in Surpass 3000 bath
    • 30 s in DI-water bath
    • Dry with N2 gun
StepParametersValues

Spin coat and bake

Spin speed (rpm)3000
Time (s)60
Bake temp. (°C)80
Time (min)4
Thickness (nm)~300 nm
EBL exposureAcceleration Voltage (kV)30

10

Aperture (µm)1520
Min. clearing dose (µC/cm²)400<100

Development


Developer

MF-319

StopperDI-water
Temp. (°C)RT*
Time (s)60

*room temperature.


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ma-N 2403 test results (restricted access)

  •  
    • Coated 4 10 mm × 10 mm samples @4000 rpm. Bake @90°C for 60 s (180°C and pins @0.210"
    • All uniform. No thickness measure yet. Nominal: ~255 nm
      • Actual is ~265 nm, as measured from SEM images (toppled small features)
      • Actual is ~266 nm, as measured with VASE
  •  
    • Dose test at 10 kV
      • For large areas (10 μm wide pads): 100 μC/cm² is already overdosed. And edges are not as crisp as for 30 kV
        • Need to test again at lower doses.
      • For small areas (100 nm wide pads): 350 μC/cm² worked in the middle of the array, but edges fell off. 500 μC/cm² kept edges  
    • Dose test at 30 kV
      • Best dose for large areas (10 μm wide pads): 400 μC/cm²
      • Small areas (100 nm wide pads): All fell off. From the 10 kV test, it seems that even 500 μC/cm² was underdosed
  •  
    • Coated a sample @3000 rpm, obtaining ~300 nm thick film
      • This will be the standard
      • Followed the Surpass 3000 process detailed above
  •  
    • Exposed the 300 nm film above @30 kV and 400 μC/cm², using 1000 μm WF (resolution was clearly compromised)
    • Scott performed etch selectivity tests on this sample (all thicknesses measured with Alpha-step IQ)
      • Recipe: Unswitched Si etch 
      • Initial step height: 318 nm
      • After etching (Si+resist): 585 nm
      • After removing resist with O2 plasma (Si only): 356 nm
      • From the above the selectivity is ~4:1 favoring Si (this is excellent!)

CSAR 62

  • Substrate: Si
StepParametersValues

Spin coat and bake

Spin speed (rpm)5000
Time (s)60
Bake temp. (°C)180
Time (min)5
Thickness (nm)360
EBL exposureAcceleration Voltage (kV)3010
Aperture (µm)1015
Min. clearing dose (µC/cm²)300150125<50

Development


Developer

ZED-N50

StopperIPA
Temp. (°C)-15RT*-15RT*
Time (s)20

*room temperature.


Show If
special@authenticated

CSAR 62 test results (restricted access)

  • 10 kV developed at room temperature
    • Single pixel dots were all overdosed with a minimum dose of 0.005 pC
    • Single pixel lines were overdosed with a minimum dose of 200 pC/cm.
    • Larger areas (10 µm wide) were slightly overdosed with a minimum dose of 50 µC/cm². Small areas (120 nm wide) were slightly overdosed with a dose of 50 µC/cm².
    • SEM images can be found  here.
  • 10 kV developed at -15 °C
    • Single pixel dots opened with a dose of 0.015 pC.
    • Single pixel lines opened with a dose of 300 pC/cm.
    • Larger areas (10 µm wide) were cleared with a dose of 125 µC/cm². Small areas (120 nm wide) were cleared with a dose of 125 µC/cm².
    • SEM images can be found  here.
  • 30 kV developed at room temperature
    • Single pixel dots worked with a minimum dose of 0.015 pC with some fluctuation on dot sizes.
    • Single pixel lines opened with a dose of 300 pC/cm.
    • Larger areas (10 µm wide) were cleared with a dose of 150 µC/cm². Small areas (120 nm wide) were cleared with a dose of 150 µC/cm².
    • SEM images can be found  here.
  • 30 kV developed at -15 °C
    • Single pixel dots worked with a minimum dose of 0.03 pC with some fluctuation on dot sizes.
    • Single pixel lines opened with 600 pC/cm.
    • Larger areas (10 µm wide) were cleared with a dose of 300 µC/cm².  Small areas (120 nm wide) were cleared with a dose of 300 µC/cm².
    • SEM images can be found  here.

 

  • Dose test on a batch expired since 2015
    • Resist behaved as expected. Same doses describe above, as well as development process, works exactly as it does for newer batches.
    • With this we can safely sell the reclaimed bottles.

Electra92

  • Substrate: Any with a resist coat
StepParametersValues

Spin coat and bake

Spin speed (rpm)Spread


500Spin


2000
Time (s)

5

60

Bake temp. (°C)*90
Time (s)60
Thickness (nm)†60

Removal


Solvent

DI water

Time (s)60

*Temperature obtained using a carrier wafer on lift pins set to 0.275" and hotplate set to 180°C (temperature must be verified using the Fluke 52 thermometer on wafer).

†Thickness inferred from the datasheet (not measured).


FBMS

For Fixed-Beam-Moving-Stage mode, use the same dose as for normal exposure and use the following FBMS parameters:

ParameterValues
Step size10 nm
Calculation width

Size of smallest feature to be patterned with FBMS


Info
titleNOTE

FBMS uses the stage to move the sample, and as such is limited by the maximum stage speed, which is 1 mm/s. If the combination of dose and beam current requires a higher speed, the system will not allow proper dose setting. If this happens, move to a smaller aperture to reduce current (lowering voltage will require lowering dose as well).



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FBMS test results (restricted access)

  • Tested exposing PMMA 950k A2 applied with standard recipe
    • Images found here
    • Tests performed with 10 kV and room temperature development
    • Best results for 500 nm wide lines obtained with 10 nm step size and 150 µC/cm²
    • Clear single pixel lines of 30 nm obtained with 450 pC/cm