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ZEP520A
- Substrate: Si
Step | Parameters | Values | |||
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Spin coat and bake | Spin speed (rpm) | 5000 | |||
Time (s) | 60 | ||||
Bake temp. (°C) | 180 | ||||
Time (min) | 5 | ||||
Thickness (nm) | 335 | ||||
EBL exposure | Acceleration Voltage (kV) | 30 | 10 | ||
Aperture (µm) | 10 | 15 | |||
Min. clearing dose (µC/cm²) | 300 | 125 | 125 | 50 | |
Development | Developer | ZED-N50 | |||
Stopper | IPA | ||||
Temp. (°C) | -15 | RT* | -15 | RT* | |
Time (s) | 20 |
*room temperature.
Show If | ||
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ZEP520A test results (restricted access)
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PMMA 950k A2 (work in progress)
- Substrate: Si
Step | Parameters | Values | |||
---|---|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | 4000 | |||
Time (s) | 45 | ||||
Bake temp. (°C) | 180 | ||||
Time (min) | 5 | ||||
Thickness (nm) | 71 | ||||
EBL exposure | Acceleration Voltage (kV) | 30 | 10 | ||
Aperture (µm) | 10 | 15 | |||
Min. clearing dose (µC/cm²) | >750 | 375 | 525 | 150 | |
Development | Developer | MIBK/IPA 1:3 | |||
Stopper | IPA | ||||
Temp. (°C) | -15 | RT* | -15 | RT* | |
Time (s) | 20 | 60 | 20 | 60 |
*room temperature.
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PMMA 950k A2 test results (restricted access)
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PMMA bilayer (work in progress)
- Substrate: Si
Step | Parameters | Values | |||
---|---|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | 4000 | |||
Time (s) | 45 | ||||
Bake temp. (°C) | 180 | ||||
Time (min) | 5 | ||||
Thickness (nm) | 54(495K) / 71(950K) | ||||
EBL exposure | Acceleration Voltage (kV) | 30 | 30 | 10 | 10 |
Aperture (µm) | 10 | 10 | 15 | 15 | |
Min. clearing dose (µC/cm²) | |||||
Development | Developer | MIBK/IPA 1:3 | |||
Stopper | IPA | ||||
Temp. (°C) | -15 | RT* | -15 | RT* | |
Time (s) | 20 | 60 | 20 | 60 |
*room temperature.
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PMMA bilayer test results (restricted access)
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AQM SiOx - 6% (work in progress)
- Substrate: Si
- Mix 0.255 g of powder to 5 mL HPLC-grade MIBK to obtain 6% concentration
- Use smaller volumes/mass to obtain smaller final volumes and different concentrations
- MIBK density: ~802 kg/m³
- Dispense using syringe with 200 nm PTFE filter
Step | Parameters | Values | |
---|---|---|---|
Spin coat and bake | Spin speed (rpm) | 4500 | |
Time (s) | 40 | ||
Bake temp. (°C) | 80 | ||
Time (min) | 4 | ||
Thickness (nm) | 100 nm | ||
EBL exposure | Acceleration Voltage (kV) | 30 | 10 |
Aperture (µm) | 10 | 15 | |
Min. clearing dose (µC/cm²) | |||
Development | Developer | MF-319 | |
Stopper | DI-water | ||
Temp. (°C) | RT* | ||
Time (s) | 60 |
*room temperature.
Show If | ||
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AQM SiOx - 6% test results (restricted access)
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ma-N2403 (work in progress)
- Substrate: Si
- Standard cleaning: piranha
- Surface priming done immediately before spin coating:
- 30 s in DI-water bath
- Dry with N2 gun
- 60 s in Surpass 3000 bath
- 30 s in DI-water bath
- Dry with N2 gun
Step | Parameters | Values | |
---|---|---|---|
Spin coat and bake | Spin speed (rpm) | 3000 | |
Time (s) | 60 | ||
Bake temp. (°C) | 80 | ||
Time (min) | 4 | ||
Thickness (nm) | ~300 nm | ||
EBL exposure | Acceleration Voltage (kV) | 30 | 10 |
Aperture (µm) | 15 | 20 | |
Min. clearing dose (µC/cm²) | 400 | <100 | |
Development | Developer | MF-319 | |
Stopper | DI-water | ||
Temp. (°C) | RT* | ||
Time (s) | 60 |
*room temperature.
Show If | ||
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ma-N 2403 test results (restricted access)
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CSAR 62
- Substrate: Si
Step | Parameters | Values | |||
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Spin coat and bake | Spin speed (rpm) | 5000 | |||
Time (s) | 60 | ||||
Bake temp. (°C) | 180 | ||||
Time (min) | 5 | ||||
Thickness (nm) | 360 | ||||
EBL exposure | Acceleration Voltage (kV) | 30 | 10 | ||
Aperture (µm) | 10 | 15 | |||
Min. clearing dose (µC/cm²) | 300 | 150 | 125 | <50 | |
Development | Developer | ZED-N50 | |||
Stopper | IPA | ||||
Temp. (°C) | -15 | RT* | -15 | RT* | |
Time (s) | 20 |
*room temperature.
Show If | ||
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CSAR 62 test results (restricted access)
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Electra92
- Substrate: Any with a resist coat
Step | Parameters | Values | |||
---|---|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | Spread | 500 | Spin | 2000 |
Time (s) | 5 | 60 | |||
Bake temp. (°C)* | 90 | ||||
Time (s) | 60 | ||||
Thickness (nm)† | 60 | ||||
Removal | Solvent | DI water | |||
Time (s) | 60 |
*Temperature obtained using a carrier wafer on lift pins set to 0.275" and hotplate set to 180°C (temperature must be verified using the Fluke 52 thermometer on wafer).
†Thickness inferred from the datasheet (not measured).
FBMS
For Fixed-Beam-Moving-Stage mode, use the same dose as for normal exposure and use the following FBMS parameters:
Parameter | Values |
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Step size | 10 nm |
Calculation width | Size of smallest feature to be patterned with FBMS |
Info | ||
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FBMS uses the stage to move the sample, and as such is limited by the maximum stage speed, which is 1 mm/s. If the combination of dose and beam current requires a higher speed, the system will not allow proper dose setting. If this happens, move to a smaller aperture to reduce current (lowering voltage will require lowering dose as well). |
Show If | ||
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FBMS test results (restricted access)
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