PMMA 950k A2
- Substrate: Si
| Step | Parameters | Values | |
|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | 4000 | |
| Time (s) | 45 | ||
| Bake temp. (°C) | 180 | ||
| Time (min) | 5 | ||
| Thickness (nm) | 71 | ||
| EBL exposure | Acceleration Voltage (kV) | 30 | 10 |
| Aperture (µm) | 10 | 15 | |
| Min. clearing dose (µC/cm²) | 450 | 150 | |
Development | Developer | MIBK/IPA 1:3 | |
| Stopper | IPA | ||
| Temp. (°C) | RT* | ||
| Time (s) | 60 | ||
*room temperature.
PMMA bilayer
- Substrate: Si
| Step | Parameters | Values | |
|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | 4000 | |
| Time (s) | 45 | ||
| Bake temp. (°C) | 180 | ||
| Time (min) | 5 | ||
| Thickness (495k/950k - nm) | 54(495K) / 71(950K) | ||
| EBL exposure | Acceleration Voltage (kV) | 30 | 10 |
| Aperture (µm) | 10 | 15 | |
| Min. clearing dose (µC/cm²) | 150 | ||
Development | Developer | MIBK/IPA 1:3 | |
| Stopper | IPA | ||
| Temp. (°C) | RT* | ||
| Time (s) | 60 | ||
*room temperature.
CSAR 62
- Substrate: Si
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | 5000 | |||
| Time (s) | 60 | ||||
| Bake temp. (°C) | 180 | ||||
| Time (min) | 5 | ||||
| Thickness (nm) | 360 | ||||
| EBL exposure | Acceleration Voltage (kV) | 30 | 10 | ||
| Aperture (µm) | 10 | 15 | |||
| Min. clearing dose (µC/cm²) | 300 | 150 | 125 | 62.5 | |
Development | Developer | ZED-N50 | |||
| Stopper | IPA | ||||
| Temp. (°C) | -15 | RT* | -15 | RT* | |
| Time (s) | 20 | ||||
*room temperature.
ma-N2403
- Substrate: Si
- Standard cleaning: piranha
- Surface priming done immediately before spin coating:
- 30 s in DI-water bath
- Dry with N2 gun
- 60 s in Surpass 3000 bath
- 30 s in DI-water bath
- Dry with N2 gun
| Step | Parameters | Values | |
|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | 3000 | |
| Time (s) | 60 | ||
| Bake temp. (°C) | 90 | ||
| Time (s) | 60 | ||
| Thickness (nm) | ~300 nm | ||
| EBL exposure | Acceleration Voltage (kV) | 30 | 10 |
| Aperture (µm) | 15 | 20 | |
| Min. clearing dose (µC/cm²) | 200 | 62.5 | |
Development | Developer | MF-319 | |
| Stopper | DI-water | ||
| Temp. (°C) | RT* | ||
| Time (s) | 60 | ||
*room temperature.
AQM SiOx - 6% (work in progress)
- Substrate: Si
- Mix 0.255 g of powder to 5 mL HPLC-grade MIBK to obtain 6% concentration
- Use smaller volumes/mass to obtain smaller final volumes and different concentrations
- MIBK density: ~802 kg/m³
- Dispense using syringe with 200 nm PTFE filter
| Step | Parameters | Values | |
|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | 4500 | |
| Time (s) | 40 | ||
| Bake temp. (°C) | 80 | ||
| Time (min) | 4 | ||
| Thickness (nm) | 100 nm | ||
| EBL exposure | Acceleration Voltage (kV) | 30 | 10 |
| Aperture (µm) | 10 | 15 | |
| Min. clearing dose (µC/cm²) | |||
Development | Developer | MF-319 | |
| Stopper | DI-water | ||
| Temp. (°C) | RT* | ||
| Time (s) | 60 | ||
*room temperature.
Electra92
- Substrate: Any with a resist coat
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | Spread | 500 | Spin | 2000 |
| Time (s) | 5 | 60 | |||
| Bake temp. (°C)* | 90 | ||||
| Time (s) | 60 | ||||
| Thickness (nm)† | 60 | ||||
Removal | Solvent | DI water | |||
| Time (s) | 60 | ||||
*Temperature obtained using a carrier wafer on lift pins set to 0.275" and hotplate set to 180°C (temperature must be verified using the Fluke 52 thermometer on wafer).
†Thickness inferred from the datasheet (not measured).
FBMS
For Fixed-Beam-Moving-Stage mode, use the same dose as for normal exposure and use the following FBMS parameters:
| Parameter | Values |
|---|---|
| Step size | 10 nm |
| Calculation width | Size of smallest feature to be patterned with FBMS |
NOTE
FBMS uses the stage to move the sample, and as such is limited by the maximum stage speed, which is 1 mm/s. If the combination of dose and beam current requires a higher speed, the system will not allow proper dose setting. If this happens, move to a smaller aperture to reduce current (a lower voltage will require a lower dose as well).
ZEP520A (Discontinued support)
- Substrate: Si
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | 5000 | |||
| Time (s) | 60 | ||||
| Bake temp. (°C) | 180 | ||||
| Time (min) | 5 | ||||
| Thickness (nm) | 335 | ||||
| EBL exposure | Acceleration Voltage (kV) | 30 | 10 | ||
| Aperture (µm) | 10 | 15 | |||
| Min. clearing dose (µC/cm²) | 300 | 150 | 150 | 50 | |
Development | Developer | ZED-N50 | |||
| Stopper | IPA | ||||
| Temp. (°C) | -15 | RT* | -15 | RT* | |
| Time (s) | 20 | ||||
*room temperature.