Process information for stoichiometric nitride deposited on the Plasma-Therm Versaline PECVD system.

Recipe parameters

Recipe name

Stoichiometric Nitride dep

RF power (W)65
Chamber pressure (mTorr)1000

SiH4 flow (sccm)

10

NH3 flow (sccm)

7.5

N2 flow (sccm)

550

He flow (sccm)

1030
Lower electrode temperature (°C)300
Upper electrode temperature (°C)200

Uniformity


Film properties

Deposition rate (nm/min)

~22.87

Uniformity, SUP (± %)1.5
Refractive index (λ = 633 nm)2.01
Stress (MPa)

-32.00 (compressive)

Etch rates

Etch process

Etch rate (nm/min)

BOE (10:1)

6.8

HF 49%

163.5

Borofloat Etch

115

Optical constants

Link to VASE .mat data:  pt_stoich_sin_220413 tl.mat