Process information for stoichiometric nitride deposited on the Plasma-Therm Versaline PECVD system.
Recipe parameters
| Recipe name |
|
|---|---|
| RF power (W) | 65 |
| Chamber pressure (mTorr) | 1000 |
SiH4 flow (sccm) | 10 |
NH3 flow (sccm) | 7.5 |
N2 flow (sccm) | 550 |
He flow (sccm) | 1030 |
| Lower electrode temperature (°C) | 300 |
| Upper electrode temperature (°C) | 200 |
Uniformity
Film properties
| Deposition rate (nm/min) | ~22.87 |
|---|---|
| Uniformity, SUP (± %) | 1.5 |
| Refractive index (λ = 633 nm) | 2.01 |
| Stress (MPa) | -32.00 (compressive) |
Etch rates
Etch process | Etch rate (nm/min) |
|---|---|
BOE (10:1) | 6.8 |
HF 49% | 163.5 |
Borofloat Etch | 115 |
