Process information for Si-rich nitride (formerly LSN) films deposited on the Plasma-Therm Versaline PECVD system.
Recipe parameters
| Recipe name |
|
|---|---|
| RF power (W) | 100 |
| Chamber pressure (mTorr) | 850 |
SiH4 flow (sccm) | 14 |
NH3 flow (sccm) | 7 |
N2 flow (sccm) | 1500 |
He flow (sccm) | 126 |
| Lower electrode temperature (°C) | 300 |
| Upper electrode temperature (°C) | 200 |
Uniformity
Film properties
| Deposition rate (nm/min) | 47.30 |
|---|---|
| Uniformity, SUP (± %) | 3.2 |
| Refractive index (λ = 633 nm) | 2.16 |
| Stress (MPa) | 201.5 (tensile) |
Etch rates
Etch process | Etch rate (nm/min) |
|---|---|
BOE (10:1) |
|
HF 49% |
|
| Borofloat Etch |
|
