Process information for Ar sputter clean recipe on the Plasma-Therm Versaline PECVD system. This recipe can be used to improve adhesion for a-Si deposition.
Recipe parameters
Recipe name | Ar clean |
---|---|
RF power (W) | 30 |
Chamber pressure (mTorr) | 600 |
Ar flow (sccm) | 1400 |
Lower electrode temperature (°C) | 250 |
Upper electrode temperature (°C) | 175 |