Process information for silicon dioxide deposited on the Plasma-Therm Versaline PECVD system.

Recipe parameters

Recipe name

SiO2 Dep

OEI SiO2 Dep

RF power (W)90
Chamber pressure (mTorr)1400

SiH4 flow (sccm)

18

N2 flow (sccm)

1400

N2O flow (sccm)

1080

He flow (sccm)

342
Lower electrode temperature (°C)325
Upper electrode temperature (°C)200

Uniformity


Film properties

Deposition rate (nm/min)

113.9

Uniformity, SUP (± %)2.7
Refractive index (λ = 633 nm)1.464
Stress (MPa)-330 (compressive)

Etch rates

Etch process

Etch rate (nm/min)

BOE (10:1)

  • 144 with agitation
  • 124 without agitation

HF 49%

  • Etches very fast. No material left even after 10 s on a ~500 nm layer

Optical constants