Process information for SiO2 films deposited on the KJLC ALD 150LX system.

Recipe parameters - Plasma SiO2 (3DMAS + O2 Plasma)

Recipe name

PR - PEALD SiO2 (3DMAS + O2 Plasma)

Substrate Temperature (°C)300
3DMAS Dose (ms)800
3DMAS Exposure (ms)2000
Ar Purge 1 (ms)5000
O2 Plasma Dose (ms)5000

Ar Purge 2 (ms)

3000
*High pressure process, where the Ar flows are reduced prior to dosing.  The process chamber is sealed, then the 3DMAS dosed for the specified dose time,.  The process chamber pressure continually rises for the duration of the dose and exposure, until Ar purge 1, where the Ar flows are increased and the chamber evacuated. 

Uniformity


Film properties

Growth rate (nm/cycle)

0.086

Uniformity, SUP (± %)1.0
Refractive index (λ = 633 nm)1.47



Optical constants

Link to VASE .mat data:

Recipe parameters - ALD - SiO2 (3DMAS + O3)

Recipe name

PR - ALD SiO2 (3DMAS + O3)

Substrate Temperature (°C)300
3DMAS Dose (ms)800
3DMAS Exposure (ms)2000
Ar Purge 1 (ms)5000
O3 Dose (ms)10000

Ar Purge 2 (ms)

10000


*High pressure process, where the Ar flows are reduced prior to dosing.  The process chamber is sealed, then the 3DMAS dosed for the specified dose time,.  The process chamber pressure continually rises for the duration of the dose and exposure, until Ar purge 1, where the Ar flows are increased and the chamber evacuated. 

Film properties

Growth rate (nm/cycle)

0.052

Uniformity, SUP (± %)
Refractive index (λ = 633 nm)

Uniformity