Process information for Al2O3 films deposited on the KJLC ALD 150LX system.
Recipe parameters - Thermal Al2O3 (TMA + H2O)
| Recipe name | PR - ALD Al2O3 (TMA + H2O) |
|---|---|
| Substrate Temperature (°C) | 300 |
| TMA Dose (ms) | 50 |
| Ar Purge 1 (ms) | 10000 |
| H2O Dose (ms) | 20 |
Ar Purge 2 (ms) | 10000 |
Uniformity
Film properties
| Growth rate (nm/cycle) | 0.09 |
|---|---|
| Uniformity, SUP (± %) | 0.4 |
| Refractive index (λ = 633 nm) | 1.66 |
Recipe parameters - Plasma Al2O3 (TMA + O2 Plasma)
| Recipe name | PR - PEALD Al2O3 (TMA + O2 Plasma) |
|---|---|
| Substrate Temperature (°C) | 300 |
| TMA Dose (ms) | 140 |
| Ar Purge 1 (ms) | 10000 |
| O2 Plasma Dose (ms) | 5000 |
Ar Purge 2 (s) | 5000 |
Film properties
| Growth rate (nm/cycle) | 0.118 |
|---|---|
| Uniformity, SUP (± %) | 1.2 |
Uniformity
Recipe parameters - Low Temperature Plasma Al2O3 (TMA + O2 Plasma) - 60C
| Recipe name | PR - PEALD Al2O3 (TMA + O2 Plasma) |
|---|---|
| Substrate Temperature (°C) | 60 |
| TMA Dose (ms) | 140 |
| Ar Purge 1 (ms) | 10000 |
| O2 Plasma Dose (ms) | 5000 |
Ar Purge 2 (s) | 5000 |
Film properties
| Growth rate (nm/cycle) | 0.147 |
|---|---|
| Uniformity, SUP (± %) | 1.9 |
Recipe parameters - Al2O3 (TMA + O3)
| Recipe name | PR - PEALD Al2O3 (TMA + O3) |
|---|---|
| Substrate Temperature (°C) | 300 |
| TMA Dose (ms) | 50 |
| Ar Purge 1 (ms) | 10000 |
| O3 Dose (ms) | 5000 |
Ar Purge 2 (ms) | 5000 |
Film properties
| Growth rate (nm/cycle) | 0.093 |
|---|---|
| Uniformity, SUP (± %) | 1.2 |
Uniformity
Recipe parameters - Low Temperature Al2O3 (TMA + O3) - 60C
| Recipe name | PR - PEALD Al2O3 (TMA + O3) |
|---|---|
| Substrate Temperature (°C) | 60 |
| TMA Dose (ms) | 50 |
| Ar Purge 1 (ms) | 15000 |
| O3 Dose (ms) | 15000 |
Ar Purge 2 (ms) | 15000 |
Film properties
| Growth rate (nm/cycle) | 0.093 |
|---|---|
| Uniformity, SUP (± %) | 0.6 |