Table of Contents
AZ 1512
- Substrate: Si
NOTE: Prepare surface with HMDS on YES Oven before applying resist.
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | Spread | 500 | Spin | 5000 |
| Time (s) | 10 | 40 | |||
| Bake temp. (°C) | 100 | ||||
| Time (s) | 60 | ||||
| Thickness (µm) | ~1.1 | ||||
| Exposure | Laser wavelength (nm) | 405 | |||
| Dose (HQ/FAST - mJ/cm²) | 100/130 | ||||
| Defocus | Check latest values on ExposureParameters.txt file | ||||
Development | Developer | AZ 400K 1:4 | |||
| Stopper | DI water | ||||
| Time (s) | 90 | ||||
AZ 1529
- Substrate: Si
NOTE: Prepare surface with HMDS on YES Oven before applying resist.
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | Spread | 500 | Spin | 3000 |
| Time (s) | 10 | 60 | |||
| Bake temp. (°C) | 100 | ||||
| Time (s) | 210 | ||||
| Thickness (µm) | ~3.4 | ||||
| Exposure | Laser wavelength (nm) | 405 | |||
| Dose (HQ/FAST - mJ/cm²) | 230/? | ||||
| Defocus | Check latest values on ExposureParameters.txt file | ||||
Development | Developer | AZ 400K 1:4 | |||
| Stopper | DI water | ||||
| Time (s) | 120 | ||||
AZ P4330
- Substrate: Si
NOTE: Prepare surface with HMDS on YES Oven before applying resist.
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | Spread | 500 | Spin | 3000 |
| Time (s) | 10 | 60 | |||
| Bake temp. (°C) | 100 | ||||
| Time (s) | 240 | ||||
| Thickness (µm) | ~3.75 | ||||
| Exposure | Laser wavelength (nm) | 405 | |||
| Dose (HQ/FAST - mJ/cm²) | 240/300 | ||||
| Defocus | Check latest values on ExposureParameters.txt file | ||||
Development | Developer | AZ 400K 1:4 | |||
| Stopper | DI water | ||||
| Time (s) | 180 | ||||
AZ 3330-F
- Substrate: Si
NOTE: Prepare surface with HMDS on YES Oven before applying resist.
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
Spin coat and bake | Spin speed (rpm) | Spread | 500 | Spin | 1500 |
| Time (s) | 10 | 60 | |||
| Bake temp. (°C) | 100 | ||||
| Time (s) | 600 | ||||
| Thickness (µm) | ~3.7 | ||||
| Exposure | Laser wavelength (nm) | 405 | |||
| Dose (HQ/FAST - mJ/cm²) | 320/370 | ||||
| Defocus | Check latest values on ExposureParameters.txt file | ||||
Development | Developer | AZ 400K 1:4 | |||
| Stopper | DI water | ||||
| Time (s) | 120 | ||||
LOR 5B / AZ 1512 bilayer
- Substrate: Si
NOTE: Prepare surface with HMDS on YES Oven before applying resist.
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
Spin coat and bake LOR 5B | Spin speed (rpm) | Spread | 500 | Spin | 3000 |
| Time (s) | 10 | 40 | |||
| Bake temp. (°C) | 150 | ||||
| Time (s) | 300 | ||||
| Thickness (µm)* | ~0.55 | ||||
| Spin coat and bake AZ1512 | Spin speed (rpm) | Spread | 500 | Spin | 5000 |
| Time (s) | 10 | 40 | |||
| Bake temp. (°C) | 100 | ||||
| Time (s) | 90 | ||||
| Thickness (µm) | 1.1 | ||||
| Exposure | Laser wavelength (nm) | 405 | |||
| Dose (mJ/cm²) | 100 | ||||
| Defocus | Check latest values on ExposureParameters.txt file | ||||
Development | Developer | AZ Developer 1:1 | |||
| Stopper | DI water | ||||
| Time (s) | 90 | ||||
| Undercut | Developer† | AZ 400k 1:4 | |||
| Stopper | DI water | ||||
| Time (s) | 10 (~1-1.5 µm undercut) | ||||
*Estimate from previous tests. Not measured recently.
†1:1 solution of MF-319 in DI-water can be used instead of AZ 400k 1:4. Using pure MF319 will produce 1-1.5 μm undercuts in 5 s, while a 1:1 dilution in water produces ~0.3 μm in 60 s.
AZ 5214-E (WORK IN PROGRESS)
- Substrate: Si
NOTE: Prepare surface with HMDS on YES Oven before applying resist.
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
| Spin speed (rpm) | Spread | 500 | Spin | 4000 | |
| Time (s) | 10 | 40 | |||
| Soft bake temp. (°C) | 90 | ||||
| Time (s) | 90 | ||||
| Thickness (µm)* | ~1.35 | ||||
Exposure | Laser wavelength (nm) | 405 | |||
| Dose (mJ/cm²) | 14 | ||||
| Defocus | Check latest values on ExposureParameters.txt file | ||||
Inversion | Hard bake temp. (°C) | 110 | |||
| Time (s) | 120 | ||||
| Flood exposure time (s) | 60 (w/ Bert or Grover) | ||||
Development | Developer | MF-319 | |||
| Stopper | DI water | ||||
| Time (s) | 90 | ||||
*Measured from SEM images
AZ-P4620 Binary (This recipe requires modifications)
NOTE
This recipe requires baking with N2, which is not available on the current lithography hotplates. An alternative will be made available shortly.
- Substrate: Si
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
| Spin speed (rpm) | Spread | 500 | Spin | 2000 | |
| Ramp (s) | 0.5 | 1 | |||
| Time (s) | 10 | 25 | |||
| Soft bake temp. (°C) | 100 | ||||
| Time (s) | 90 w/ N2 | 60 w/ vacuum | |||
| Thickness (µm)* | 9.5 | ||||
Exposure | Laser wavelength (nm) | 405 | |||
| Dose (mJ/cm²)† | 590 | ||||
| Defocus | Check latest values on ExposureParameters.txt file | ||||
Development | Developer | AZ 400K 1:4 | |||
| Stopper (time) | DI H2O (30 s) | ||||
| Time (min) | 2 | ||||
*Measured with Filmetrics F50-UV
†Value for standard DoF. Note that 90% of the beam is blocked when using Large DoF, and 96.77% when using Extra Large DoF. We strongly recommend running a Dose test to better asses the correct dose for your process.
SU-8 2050 (WORK IN PROGRESS)
- Substrate: Si
| Step | Parameters | Values | |||
|---|---|---|---|---|---|
| Spin speed (rpm) | Spread | 500 | Spin | 3000 | |
| Ramp (s) | 5 | 8 | |||
| Time (s) | 5 | 30 | |||
| Soft bake temp. (°C) | 65 | 95 | |||
| Time (min) | 3 | 5 | |||
| Thickness (µm)* | ~50 | ||||
Exposure | Laser wavelength (nm) | 375 | |||
| Dose (mJ/cm²)† | 600 | ||||
| Defocus | Check latest values on ExposureParameters.txt file | ||||
Post bake | Post bake temp. (°C) | 65 | 95 | ||
| Time (min) | 1 | 4 | |||
Development | Developer | SU-8 Developer | |||
| Stopper (time) | IPA (30 s) | ||||
| Time (min) | 4 | ||||
*Observed through SEM images.
†Value for standard DoF. Note that 90% of the beam is blocked when using Large DoF, and 96.77% when using Extra Large DoF. We strongly recommend running a Dose test to better asses the correct dose for your process.