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Analysis summary


Nitride standardNitride historicalOxide standard
Deposition rate (nm/min)39.6823.5670.20
Mean thickness (nm)171.95164.93163.79
Thickness uniformity (SUP%)5.7%3.7%7.1%
Film stress (MPa)-938.38-1209.01-357.66
Optical constants




Process description

Recommend performing standard qual of hardware prior to deposition tests (rate of rise, MFC cal etc).  Google form found here.

Deposit nominal ~200 nm of standard silicon nitride, historical silicon nitride, and standard silicon dioxide recipes on PECVD (Trion).  Measure film stress, optical constants, thickness map.

  1. Standard piranha clean of 3 100 mm Si prime wafers
  2. Pre-deposition wafer bow baseline measurement
  3. Nitride conditioning:  1200 s of "nitride cond"
  4. Standard nitride deposition on wafer 1:  260 s of "nitride standard".  Recipe loaded prior to venting to allow time to heat from 300C to 325C.
  5. Historical nitride deposition on wafer 2:  420 s of "nitride historical".  Recipe loaded prior to venting to allow time to cool from 325 to 300C.
  6. Perform 3000 s Chamber Clean.
  7. Oxide conditioning:  500 s of "oxide standard"
  8. Standard oxide deposition on wafer 3:  140 s of "oxide standard"
  9. Ellipsometry
  10. Film thickness mapping
  11. Post-deposition stress measurement

Ellipsometry

Tool:  VASE Ellipsometer

Acquisition parameters:

Thickness map

Tool:  Filmetrics F50

  • Oxide: recipe "SiO2 on Si", 115 pts, 5 mm edge exclusion, fitting λ = 400–1000 nm.  Fitting model is SiO2.
  • Nitride: recipe "Si3N4 on Si", 115 pts, 5 mm edge exclusion, fitting λ = 400–1000 nm.  Fitting model is 190808_pecvdnit_newnitride_c-l-osc_table.

Film stress measurement

Tool:  Thin Film Stress Measurement (FLX 2320S).

Acquisition parameters:  Mapping, 0 : 30 : 150 degrees.



Data repository