Skip to end of metadata
Go to start of metadata

Analysis summary


Nitride standardNitride historicalOxide standard
Deposition rate (nm/min)45.527.682.3
Mean thickness (nm)197.3193.1192.0
Thickness uniformity (SUP%)±2.0%2.4%±2.2%
Film stress (MPa)-752-1030-363
Optical constants




Process description

Deposit nominal ~200 nm of standard silicon nitride, historical silicon nitride, and standard silicon dioxide recipes on PECVD (Trion).  Measure film stress, optical constants, thickness map.

  1. Standard piranha clean of 3 100 mm Si prime wafers
  2. Pre-deposition wafer bow baseline measurement
  3. Nitride conditioning:  1200 s of "nitride cond"
  4. Standard nitride deposition on wafer 1:  260 s of "nitride standard"
  5. Historical nitride deposition on wafer 2:  420 s of "nitride historical"
  6. Oxide conditioning:  XXX s of "oxide standard"
  7. Standard oxide deposition on wafer 3:  140 s of "oxide standard"
  8. Ellipsometry
  9. Film thickness mapping
  10. Post-deposition stress measurement

Ellipsometry

Tool:  VASE Ellipsometer

Acquisition parameters:

Thickness map

Tool:  Filmetrics F50

  • Oxide: recipe "SiO2 on Si", 115 pts, 5 mm edge exclusion, fitting λ = 400–1000 nm
  • Nitride: recipe "Si3N4 on Si", 115 pts, 5 mm edge exclusion, fitting λ = 400–1000 nm

Film stress measurement

Tool:  Thin Film Stress Measurement (FLX 2320S).

Acquisition parameters:



Data repository